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Same model may have multiple batches, images only for reference.
SI7456DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7456DP-T1-GE3

Part No SI7456DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 5.7A PPAK SO-8
Datasheet
SI7456DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 9.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 139361-SI7456DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7456DP-T1-GE3 CAD Model

Description

The Vishay SI7456DP-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 5.7A at 25°C.

  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 44nC @ 10V
  • Maximum Rds On at Id,Vgs: 25 mOhm @ 9.3A and 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 5.7A @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7695 $53.0850
70+ $1.4519 $101.6330
110+ $1.4066 $154.7260
150+ $1.3612 $204.1800
190+ $1.3158 $250.0020
255+ $1.1797 $300.8235
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,800 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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