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SI7530DP

Part No SI7530DP
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N- and P-Channel 60-V (D-S) MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Win Source Part Number 1249486-SI7530DP
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7530DP CAD Model

Description

The SI7530DP is a P-Channel MOSFET manufactured by Vishay. It's designed for load switching and power management applications in various electronic devices. Due to its P-channel configuration, it is often used in high-side switching applications where a ground-referenced control signal is desired.

Applications

  • Load Switching (High-Side Switching)
  • Power Management
  • DC-DC Conversion
  • Battery Management Systems
  • Reverse Polarity Protection

Features

  • P-Channel MOSFET
  • Low On-Resistance (RDS(on))
  • Low Gate Threshold Voltage (VGS(th))
  • Fast Switching Speed
  • PowerPAK® SO-8 Package

Benefits

  • Simplified High-Side Switching: The P-channel configuration simplifies high-side switching, as it can be controlled directly by a ground-referenced signal.
  • Improved Efficiency: The low on-resistance minimizes conduction losses, improving overall system efficiency.
  • Direct Logic-Level Interface: The low gate threshold voltage allows for direct driving from logic-level signals, simplifying the gate drive circuitry.
  • Reduced Switching Losses: Fast switching speed minimizes switching losses, contributing to higher efficiency.
  • Excellent Thermal Performance: The PowerPAK® SO-8 package provides excellent thermal dissipation capabilities.

Additional Details

The SI7530DP typically has a drain-source voltage (VDS) rating of -30V. The continuous drain current (ID) rating is typically in the range of several amperes, depending on operating conditions and thermal management. The RDS(on) is usually very low, often in the milliohm range, at a gate-source voltage of -4.5V. The PowerPAK® SO-8 package is designed for efficient heat dissipation, allowing the device to handle higher power levels. This MOSFET is suitable for a wide range of power management and load switching applications, particularly those requiring high-side switching and efficient performance.

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