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SI7664DP-T1-E3

Part No SI7664DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 7770 pF @ 15 V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SI7664
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277516-SI7664DP-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI7664DP-T1-E3 CAD Model

Description

The SI7664DP-T1-E3 is an N-channel MOSFET transistor manufactured by Vishay Siliconix.

  • FET Type: Single MOSFET
  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 40A (Tc)
  • Maximum Rds On: 3.1mOhm @ 20A, 10V
  • Gate Charge (Qg): 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 15 V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Mounting: Surface-Mounted
  • Package: PowerPAK® SO-8
  • Maximum Power Dissipation: 5.4W (Ta), 83W (Tc)
  • Temperature Range for Operation: -55°C to 150°C (TJ)

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