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Same model may have multiple batches, images only for reference.
SI7674DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7674DP-T1-E3

Part No SI7674DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PPAK SO-8 / Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO T/R
Datasheet
SI7674DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 90nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5910pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 5.4W (Ta), 83W (Tc)
Rds On (Maximum) @ Id, Vgs 3.3 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SO-8
Package PowerPAK SO-8
Win Source Part Number 794320-SI7674DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si7674DP
Introduction Date February 01, 2006
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7674DP-T1-E3 CAD Model

Description

The SI7674DP-T1-E3 is a PowerPAK SO-8 packaged MOSFET manufactured by Vishay Siliconix.

  • Current Rating: 40A (Tc)
  • Operating Temperature Range: -55°C ~ 150°C (TJ)
  • Gate Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • N-channel Type MOSFET: N-channel
  • Drain-Source Voltage: 30V
  • Vgs(th) (Maximum) @ Id: 3V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 5910pF @ 15V
  • Maximum Vgs: ±20V
  • Maximum Power Dissipation: 5.4W (Ta) and 83W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 3.3 mOhm @ 20A, 10V

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