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Same model may have multiple batches, images only for reference.
SI7742DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI7742DP-T1-GE3

Part No SI7742DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A PPAK SO-8
Datasheet
SI7742DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.7V @ 250μA
Max Gate Charge 115nC @ 10V
Max Input Capacitance 5300pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 122263-SI7742DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7742DP-T1-GE3 CAD Model

Description

The Vishay 122263-SI7742DP-T1-GE3 is a MOSFET semiconductor device designed for use in discrete semiconductor products.

  • Power Dissipation: 5.4W (Ta) and 83W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Channel Polarity: N-Channel
  • Mounting Technology: SMD (SMT)
  • Maximum Rds On at Id,Vgs: 3.5 mOhm @ 20A, 10V
  • Package: PowerPAK SO-8
  • Temperature Range: -55°C to 150°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 115nC @ 10V
  • Supply and Demand Status: Limited

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105+ $1.1469 $120.4245
160+ $1.1111 $177.7760
215+ $1.0753 $231.1895
280+ $1.0394 $291.0320
375+ $0.9319 $349.4625
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