The Vishay SI7806ADN-T1-GE3 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 9A at 25°C.

• Channel Type: N-channel
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 9A @ 25°C
• Power Dissipation: 1.5W (Ta)
• Maximum Rds On: 11 mOhm @ 14A, 10V
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Gate Charge: 20nC @ 5V
• Maximum Gate-Source Voltage: ±20V
• Package: PowerPAK 1212-8
• Temperature Range: -55°C to 150°C (TJ)
• Common Use: Industrial power management