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Same model may have multiple batches, images only for reference.
SI7812DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7812DN-T1-GE3

Part No SI7812DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 16A 1212-8 PPAK
Datasheet
SI7812DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 840pF @ 35V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 37 mOhm @ 7.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 042623-SI7812DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7812DN-T1-GE3 CAD Model

Description

The Vishay 042623-SI7812DN-T1-GE3 is a MOSFET component that belongs to the Discrete Semiconductor Products category.

  • Manufacturer: Vishay
  • Manufacturer Part Number: 042623-SI7812DN-T1-GE3
  • Supply and Demand Status: balanced
  • Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current @ 25°C: 16A (Tc)
  • Maximum Rds On @ Id,Vgs: 37 mOhm @ 7.2A, 10V
  • Common Applications: industrial power management

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Quantity Unit Price Ext. Price
40+ $1.4149 $56.5960
80+ $1.3254 $106.0320
120+ $1.2806 $153.6720
170+ $1.1911 $202.4870
220+ $1.1463 $252.1860
275+ $1.1015 $302.9125
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