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SI7842DP-T1-E3

Part No SI7842DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 6.3A 8-Pin PowerPAK SO T/R / MOSFET 2N-CH 30V 6.3A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.3A
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 20nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 125829-SI7842DP-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si7842DP
Introduction Date May 22, 2001
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7842DP-T1-E3 CAD Model

Description

The Si7842DP-T1-E3 is a dual N-channel MOSFET from Vishay.

  • Gate: logic level gate
  • Maximum Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 6.3A
  • Gate-Source Threshold Voltage: 2.4V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 7.5A, 10V
  • Package/Case: PowerPAK SO-8 Dual
  • Popularity Rating: high
  • Status: obsolete (EOL)
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5223 $60.8920
95+ $1.2497 $118.7215
145+ $1.2104 $175.5080
200+ $1.1712 $234.2400
260+ $1.1319 $294.2940
345+ $1.0152 $350.2440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,700 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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