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Same model may have multiple batches, images only for reference.
SI7848DP-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI7848DP-T1-E3

Part No SI7848DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 10.4A PPAK SO-8
Datasheet
SI7848DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 10.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 28nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.83W (Ta)
Maximum Rds On at Id,Vgs 9 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 100653-SI7848DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7848DP-T1-E3 CAD Model

Description

The Vishay 100653-SI7848DP-T1-E3 is an N-Channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 10.4A at 25°C.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 10.4A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 28nC @ 5V
  • Maximum Rds On @ Id,Vgs: 9 mOhm @ 14A, 10V
  • Package: PowerPAK SO-8
  • Suitable Applications: power supplies, motor drives, and DC-DC converters
  • Status: obsolete (EOL)
  • Supply and Demand: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3992 $59.9800
59+ $1.9686 $116.1474
91+ $1.9071 $173.5461
126+ $1.8456 $232.5456
162+ $1.7840 $289.0080
217+ $1.5994 $347.0698
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,450 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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