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Same model may have multiple batches, images only for reference.
SI7852ADP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7852ADP-T1-E3

Part No SI7852ADP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 30A PPAK SO-8
Datasheet
SI7852ADP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1825pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 62.5W (Tc)
Maximum Rds On at Id,Vgs 17 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096204-SI7852ADP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7852ADP-T1-E3 CAD Model

Description

This MOSFET component, manufactured by Vishay, is a high-performance device that is designed for use in a range of different electronic applications.

  • Polarity: N-Channel
  • Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Mounting: SMD (SMT)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case / Package: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 30A (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6560 $57.9600
85+ $1.3589 $115.5065
135+ $1.3164 $177.7140
185+ $1.2740 $235.6900
235+ $1.2315 $289.4025
315+ $1.1041 $347.7915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,610 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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