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Same model may have multiple batches, images only for reference.
BC848CWH6327XTSA1 Real Image
Same model may have multiple batches, images only for reference.

BC848CWH6327XTSA1

Part No BC848CWH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.1A SOT323
Datasheet
BC848CWH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 250mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Win Source Part Number 1022464-BC848CWH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Lighting, LED Lighting
Ultra Librarian 3D Model Ultra Librarian BC848CWH6327XTSA1 CAD Model

Description

The Infineon Technologies BC848CWH6327XTSA1 is an NPN transistor designed for discrete semiconductor applications.

  • Type: NPN Transistor
  • Application: Discrete Semiconductor
  • Maximum Collector-Emitter Breakdown Voltage: 30V
  • Maximum Power Dissipation: 250mW
  • Supply and Demand Status: Sufficient
  • Package: PG-SOT323-3
  • Maximum Current Collector: 100mA

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