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Same model may have multiple batches, images only for reference.
SI7856ADP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7856ADP-T1-GE3

Part No SI7856ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 15A PPAK SO-8
Datasheet
SI7856ADP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 55nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 064578-SI7856ADP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7856ADP-T1-GE3 CAD Model

Description

The Vishay 064578-SI7856ADP-T1-GE3 is a discrete semiconductor product that is in the MOSFET technology category.

  • Supply and Demand Status: balanced
  • Ideal for: those looking for a single-channel MOSFET that can handle high power
  • Features: reliable and efficient
  • Maximum Power Dissipation: 1.9W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id,Vgs: 3.7 mOhm @ 25A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 55nC @ 4.5V

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