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SI7858ADP-T1-E3

Part No SI7858ADP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 20A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 80nC @ 4.5V
Max Input Capacitance 5700pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 29A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028676-SI7858ADP-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7858ADP-T1-E3 CAD Model

Description

The Vishay SI7858ADP-T1-E3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 20A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 80nC @ 4.5V
  • Maximum Rds On @ Id, Vgs: 2.6 mOhm @ 29A, 4.5V
  • Package: PowerPAK SO-8
  • Power Dissipation: 1.9W (Ta)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Maximum Input Capacitance: 5700pF @ 6V
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5188 $52.7820
35+ $2.8873 $101.0555
54+ $2.7970 $151.0380
74+ $2.7068 $200.3032
96+ $2.6166 $251.1936
128+ $2.3459 $300.2752
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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