The Vishay SI7858ADP-T1-E3 is an N-channel MOSFET designed for use in discrete semiconductor products. It features a drain-source breakdown voltage of 12V and a continuous drain current of 20A at 25°C. The MOSFET has a gate-source threshold voltage of 1.5V at 250μA and a maximum gate charge of 80nC at 4.5V. The maximum Rds On at Id, Vgs is 2.6 mOhm at 29A, 4.5V. The device is packaged in a PowerPAK SO-8 case and has a power dissipation of 1.9W (Ta). It operates in a temperature range of -55°C to 150°C (TJ) and has a maximum input capacitance of 5700pF at 6V. The supply and demand status is sufficient.