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Same model may have multiple batches, images only for reference.
SI7864ADP-T1-E3
Same model may have multiple batches, images only for reference.

SI7864ADP-T1-E3

Part No SI7864ADP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 18 A
Drain to Source Resistance 3 mΩ
Drain to Source Voltage (Vdss) 20 V
Element Configuration Single
Fall Time 44 ns
Gate to Source Voltage (Vgs) 8 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.9 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Channels 1
Number of Elements 1
Number of Pins 8
Power Dissipation 1.9 W
Rise Time 44 ns
RoHS Compliant
Turn-Off Delay Time 150 ns
Turn-On Delay Time 40 ns
Weight 506.605978 mg
Win Source Part Number 1007609-SI7864ADP-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI7864ADP-T1-E3 CAD Model

Description

The SI7864ADP-T1-E3 is a Vishay MOSFET transistor that has a drain-to-source voltage of 20 V and a continuous drain current (ID) of 18 A.

  • Popularity: Low
  • Application: RF MOSFETs and FETs
  • Mount: Surface Mount
  • RoHS: Compliant
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Configuration: Single Element
  • Turn-On Delay Time: 40 ns
  • Turn-Off Delay Time: 150 ns
  • Weight: 506.605978 mg
  • Power Dissipation: 1.9 W
  • Market Status: Open Market

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