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SI7882DP-T1-GE3

Part No SI7882DP-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 12V 13A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) at 25°C 13A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Maximum) at Id, Vgs 5.5mOhm at 17A, 4.5V
Vgs(th) (Maximum) at Id 1.4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 30nC at 4.5V
Maximum Vgs ±8V
Power Dissipation (Maximum) 1.9W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK SO-8
Manufacturer Package PowerPAK SO-8
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805502-SI7882DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI7882DP-T1-GE3 CAD Model

Description

The Vishay Siliconix SI7882DP-T1-GE3 is a N-channel MOSFET that is designed for use in a variety of applications such as power supplies, motor control, and lighting.

  • Drain to source voltage (Vdss): 12V
  • Continuous drain current (Id): 13A
  • Package: PowerPAK SO-8
  • End Of Life: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.5523 $69.8535
105+ $1.2742 $133.7910
160+ $1.2341 $197.4560
220+ $1.1940 $262.6800
280+ $1.1552 $323.4560
375+ $1.0349 $388.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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