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Same model may have multiple batches, images only for reference.
SI7886ADP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7886ADP-T1-E3

Part No SI7886ADP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 15A PPAK SO-8
Datasheet
SI7886ADP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 60nC @ 4.5V
Max Input Capacitance 6450pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028684-SI7886ADP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7886ADP-T1-E3 CAD Model

Description

The Vishay SI7886ADP-T1-E3 is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 30V and Continuous Drain Current @ 25°C of 15A (Ta).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 15A (Ta)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 60nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 4 mOhm @ 25A, 10V
  • Package: PowerPAK SO-8
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6976 $59.4160
85+ $1.3929 $118.3965
130+ $1.3495 $175.4350
180+ $1.3060 $235.0800
230+ $1.2624 $290.3520
310+ $1.1318 $350.8580
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Availability: 100 pieces
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