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Same model may have multiple batches, images only for reference.
SI7964DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7964DP-T1-E3

Part No SI7964DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 6.1A PPAK SO-8 / Trans MOSFET N-CH 60V 6.1A 8-Pin PowerPAK SO T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 6.1A
Rds On (Maximum) @ Id, Vgs 23 mOhm @ 9.6A, 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 65nC @ 10V
Power - Max 1.4W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package PowerPAK SO-8 Dual
Manufacturer Package PowerPAK SO-8 Dual
Win Source Part Number 794329-SI7964DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si7964DP
Introduction Date October 07, 2004
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7964DP-T1-E3 CAD Model

Description

The Vishay Siliconix 794329-SI7964DP-T1-E3 is a dual N-channel TrenchFET FET.

  • Maximum Continuous Drain Current: 6.1A @ 25°C
  • Maximum Power: 1.4W
  • Package: PowerPAK SO-8 Dual
  • Drain-Source Voltage: 60V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 65nC @ 10V
  • Maximum On-Resistance: 23 mOhm @ 9.6A and 10V
  • Family Name: Si7964DP
  • Category: Discrete Semiconductor Products

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200+ $1.7371 $347.4200
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