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Same model may have multiple batches, images only for reference.
SI7983DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7983DP-T1-E3

Part No SI7983DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 7.7A PPAK SO-8
Datasheet
SI7983DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.7A
Maximum Rds On at Id,Vgs 17 mOhm @ 12A, 4.5V
Gate-Source Threshold Voltage 1V @ 600μA
Max Gate Charge 74nC @ 4.5V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 137489-SI7983DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7983DP-T1-E3 CAD Model

Description

The SI7983DP-T1-E3 from Vishay is a dual 2 P-channel logic level gate FET belonging to the category of discrete semiconductor products.

  • Supply and Demand Status: Limited
  • On-Resistance: Low
  • Gate Charge: Low
  • Drain-Source Voltage: 20V
  • Continuous Drain Current: 7.7A
  • Temperature Range: -55°C to 150°C
  • Package: powerPAK SO-8 dual

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6087 $64.3480
90+ $1.3201 $118.8090
140+ $1.2787 $179.0180
190+ $1.2375 $235.1250
245+ $1.1963 $293.0935
325+ $1.0725 $348.5625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 225 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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