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SI7998DP-T1-GE3 Real Image SI7998DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SI7998DP-T1-GE3 Real Image SI7998DP-T1-GE3 Real Image
SI7998DP-T1-GE3 Real Image SI7998DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7998DP-T1-GE3

Part No SI7998DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 25A PPAK SO-8
Datasheet
SI7998DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 25A, 30A
Maximum Rds On at Id,Vgs 9.3 mOhm @ 15A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1100pF @ 15V
Maximum Power Dissipation 22W, 40W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 064583-SI7998DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7998DP-T1-GE3 CAD Model

Description

The Vishay 064583-SI7998DP-T1-GE3 is a dual N-channel logic level gate FET designed for use in discrete semiconductor products.

  • Package: PowerPAK SO-8 Dual
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 22W and 40W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 25A and 30A
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge @ 10V: 26nC
  • Maximum Input Capacitance @ 15V: 1100pF
  • Maximum Rds On @ Id,Vgs: 9.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
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