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SI8417DB-T2-E1

Part No SI8417DB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 14.5A 2X2 6MFP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 57nC @ 5V
Max Input Capacitance 2220pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.9W (Ta), 6.57W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-Micro Foot
Dimension 6-MICRO FOOT
Win Source Part Number 064587-SI8417DB-T2-E1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI8417DB-T2-E1 CAD Model

Description

The SI8417DB-T2-E1 is an obsolete (EOL) P-Channel MOSFET transistor from Vishay. It comes in a 6-Micro Foot package and has a medium popularity. It has a base product number of SI8417DB.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8753 $61.2710
165+ $0.7182 $118.5030
250+ $0.6958 $173.9500
345+ $0.6734 $232.3230
445+ $0.6509 $289.6505
595+ $0.5835 $347.1825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,120 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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