The Si8425DB-T1-E1 is a P-channel MOSFET manufactured by Vishay.

• Power Dissipation: 1.1W (Ta) and 2.7W (Tc)
• Temperature Range: -55°C to 150°C (TJ)
• Package: 4-WLCSP (1.6x1.6)
• Drain-Source Breakdown Voltage: 20V
• Gate-Source Voltage (Max): ±10V
• Category: discrete semiconductor product
• Drive Voltage: 1.8V and 4.5V for max Rds on and min Rds on
• Gate-Source Threshold Voltage: 900mV @ 250μA
• Gate Charge (Max): 110nC @ 10V
• Input Capacitance (Max): 2800pF @ 10V
• Introduction Date: October 10, 2012
• Status: still in use
• Estimated EOL Date: 2026
• Supply and Demand Status: sufficient