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SI8457DB-T1-E1

Part No SI8457DB-T1-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 4MICRO FOOT  /  P-Channel 12 V 6.5A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 19mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 6 V
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-MICRO FOOT® (1.6x1.6)
Package / Case 4-UFBGA
Base Product Number SI8457
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SI8457DB-T1-E1DKR,SI8457DB-T1-E1CT,SI8457DB-T1-E1TR
Standard Package 3,000
Win Source Part Number 1192942-SI8457DB-T1-E1
Ultra Librarian 3D Model Ultra Librarian SI8457DB-T1-E1 CAD Model

Description

The SI8457DB-T1-E1 is a P-channel MOSFET transistor from Vishay designed for use in power management applications.

  • Maximum Drain-Source Voltage: 12V
  • Continuous Drain Current: 6.5A
  • Package: 4-MICRO FOOT
  • Series: TrenchFET

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8209 $52.3881
21+ $4.7762 $100.3002
33+ $4.6269 $152.6877
45+ $4.4777 $201.4965
58+ $4.3284 $251.0472
78+ $3.8806 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,800 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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