SI8487DB-T1-E1

Part No SI8487DB-T1-E1
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 30V MICROFOOT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Maximum) at Id, Vgs 31mOhm at 2A, 10V
Vgs(th) (Maximum) at Id 1.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 80nC at 10V
Maximum Vgs ±12V
Input Capacitance (Ciss) (Maximum) at Vds 2240pF at 15V
Power Dissipation (Maximum) 1.1W , 2.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 4-Microfoot
Manufacturer Package 4-UFBGA
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803782-SI8487DB-T1-E1

Description

Vishay Siliconix's SI8487DB-T1-E1 is a P-channel MOSFET that has a drain to source voltage of 30V and a maximum power dissipation of 1.1W. It comes in a 4-UFBGA package and can withstand temperatures ranging from -55°C to 150°C. With a medium popularity and balanced supply and demand status, this MOSFET is a reliable choice for your electronic needs. The manufacturer pack quantity for this product is 3,000.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
115+ $0.4434 $50.9910
245+ $0.4148 $101.6260
375+ $0.4005 $150.1875
540+ $0.3719 $200.8260
700+ $0.3576 $250.3200
875+ $0.3433 $300.3875
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 5,920 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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