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SI8821EDB-T2-E1

Part No SI8821EDB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 135mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 15 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
Base Product Number SI8821
Other Names SI8821EDB-T2-E1CT,SI8821EDB-T2-E1TR,SI8821EDB-T2-E1DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277577-SI8821EDB-T2-E1
Ultra Librarian 3D Model Ultra Librarian SI8821EDB-T2-E1 CAD Model

Description

The SI8821EDB-T2-E1 is a P-channel MOSFET transistor that is used in discrete semiconductor products, specifically in FETs, MOSFETs - Single.

  • Part of: TrenchFET® series
  • Mounting: through surface-mount technology
  • Maximum drain to source voltage: 30V
  • Continuous drain current: 1.6A @ 25°C
  • Maximum Rds On: 135mOhm @ 1A and 4.5V
  • Maximum gate-source voltage: ±12V
  • Maximum operating temperature: -55°C to 150°C
  • Supplied by: Vishay Siliconix

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3112 $50.8464
53+ $1.8963 $100.5039
82+ $1.8371 $150.6422
113+ $1.7778 $200.8914
146+ $1.7186 $250.9156
195+ $1.5408 $300.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,219 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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