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SI91822DH-AD-T1-E3

Part No SI91822DH-AD-T1-E3
Manufacturer Vishay
Catalog HOT - SALES and EOL Components (S)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Win Source Part Number 323140-SI91822DH-AD-T1-E3
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI91822DH-AD-T1-E3 CAD Model

Description

The SI91822DH-AD-T1-E3 is a P-Channel MOSFET manufactured by Vishay. It is primarily intended for load switching and power management applications. This MOSFET is characterized by its low on-resistance (RDS(on)), which results in reduced power loss and enhanced efficiency. It's well-suited for portable devices and systems that require extended battery life and space-saving designs.

Applications

  • Load Switching
  • Power Management in Portable Devices
  • Battery Management Systems
  • DC-DC Converters
  • Power Distribution

Features

  • P-Channel MOSFET
  • Low On-Resistance (RDS(on))
  • Logic Level Gate Drive
  • Surface Mount Package
  • Halogen-Free per IEC 61249-2-21

Benefits

  • High Efficiency: Low RDS(on) minimizes power dissipation, resulting in improved efficiency.
  • Extended Battery Life: Low power loss contributes to longer battery life in portable devices.
  • Space Saving: Surface mount package allows for compact designs.
  • Easy to Use: Logic level gate drive simplifies circuit design.
  • Environmentally Friendly: Halogen-free construction.

Additional Details

The 'AD' likely refers to a specific variant within the SI91822DH family, potentially indicating a particular RDS(on) or gate threshold voltage characteristic. The 'T1' signifies tape and reel packaging for automated assembly. The 'E3' suffix indicates compliance with RoHS (Restriction of Hazardous Substances) standards, meaning it's lead-free and complies with environmental regulations. The datasheet for this component should be consulted for precise electrical characteristics, thermal performance, and application guidelines. It's crucial to consider the operating temperature range and power dissipation capabilities when designing this MOSFET into a circuit.

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