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SI9407BDY-T1-E3

Part No SI9407BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 60V 4.7A 8-Pin SOIC N T/R / MOSFET P-CH 60V 4.7A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 600pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096347-SI9407BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si9407BDY
Introduction Date February 04, 2008
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI9407BDY-T1-E3 CAD Model

Description

The Vishay SI9407BDY-T1-E3 is a P-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 4.7A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Rds On @ Id,Vgs: 120 mOhm @ 3.2A, 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: Surface mountable
  • Operating Temperature: -55°C to 150°C (TJ)
  • Standard Package: Reel - TR
  • Dimensions: 8-SOIC (0.154", 3.90mm Width)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7830 $50.8950
160+ $0.6424 $102.7840
245+ $0.6224 $152.4880
335+ $0.6023 $201.7705
430+ $0.5822 $250.3460
575+ $0.5220 $300.1500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,010 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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