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Same model may have multiple batches, images only for reference.
SI9934BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI9934BDY-T1-GE3

Part No SI9934BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 4.8A 8SOIC
Datasheet
SI9934BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.8A
Maximum Rds On at Id,Vgs 35 mOhm @ 6.4A, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 20nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096357-SI9934BDY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI9934BDY-T1-GE3 CAD Model

Description

The Vishay SI9934BDY-T1-GE3 is a dual P-channel FET with a maximum power dissipation of 1.1W.

  • Channel Type: Dual P-channel
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 4.8A
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 20nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 35 mOhm @ 6.4A, 4.5V
  • Package: 8-SO
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
570+ $0.1016 $57.9120
1,390+ $0.0832 $115.6480
2,145+ $0.0809 $173.5305
2,945+ $0.0785 $231.1825
3,850+ $0.0751 $289.1350
5,085+ $0.0681 $346.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,700 pieces
MOQ: 570 pcs
Order Increment : 1 pcs
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