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SIA108DJ-T1-GE3

Part No SIA108DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 38mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 545 pF @ 40 V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
Base Product Number SIA108
Other Names SIA108DJ-T1-GE3DKR,SIA108DJ-T1-GE3CT,SIA108DJ-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277621-SIA108DJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA108DJ-T1-GE3 CAD Model

Description

The SIA108DJ-T1-GE3 MOSFET from Vishay Siliconix is an N-channel FET that is suitable for a wide range of applications.

  • Drain to Source Voltage (Vdss): 80 V
  • Continuous Drain Current (Id): 6.6A (Ta), 12A (Tc)
  • Rds On (Max): 38mOhm @ 4A, 10V
  • Vgs(th) (Max): 4V @ 250µA
  • Gate Charge (Qg) (Max): 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max): 545 pF @ 40 V
  • Temperature Range: -55°C to 150°C (TJ)
  • RoHS compliant: Yes
  • Suitable for: SMD (SMT) mounting
  • Package: PowerPAK SC-70-6

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7110 $53.3250
175+ $0.5834 $102.0950
270+ $0.5651 $152.5770
370+ $0.5469 $202.3530
475+ $0.5287 $251.1325
635+ $0.4740 $300.9900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,930 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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