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SIA416DJ-T1-GE3

Part No SIA416DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 83mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 50 V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
Base Product Number SIA416
Other Names SIA416DJT1GE3,SIA416DJ-T1-GE3DKR,SIA416DJ-T1-GE3CT,SIA416DJ-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277586-SIA416DJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA416DJ-T1-GE3 CAD Model

Description

The SIA416DJ-T1-GE3 MOSFET from Vishay Siliconix is a N-channel FET.

  • Maximum drain to source voltage: 100 V
  • Continuous drain current: 11.3A @ 25°C
  • Maximum on-resistance: 83mOhm @ 3.2A and 10V
  • Maximum gate-source voltage: ±20V
  • Gate charge: 10 nC @ 10 V
  • RoHS compliant: yes
  • ECCN: EAR99
  • Package: PowerPAK® SC-70-6 package
  • Operates at: temperatures ranging from -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6578 $52.6240
190+ $0.5398 $102.5620
290+ $0.5229 $151.6410
400+ $0.5060 $202.4000
515+ $0.4892 $251.9380
685+ $0.4386 $300.4410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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