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Same model may have multiple batches, images only for reference.
SIA417DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA417DJ-T1-GE3

Part No SIA417DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 12A SC70-6
Datasheet
SIA417DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 32nC @ 5V
Max Input Capacitance 1600pF @ 4V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 098563-SIA417DJ-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIA417DJ-T1-GE3 CAD Model

Description

The Vishay 098563-SIA417DJ-T1-GE3 is a P-channel MOSFET transistor that is designed to operate in a temperature range of -55°C to 150°C.

  • Maximum Power Dissipation: 3.5W (Ta), 19W (Tc)
  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current: 12A (Tc) @ 25°C
  • Maximum Rds On: 23 mOhm @ 7A, 4.5V
  • Package: PowerPAK SC-70-6 Single

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5747 $60.3435
245+ $0.4716 $115.5420
380+ $0.4569 $173.6220
525+ $0.4421 $232.1025
680+ $0.4275 $290.7000
905+ $0.3832 $346.7960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,754 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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