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SIA445EDJ-T1-GE3

Part No SIA445EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 12A SC-70
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2130pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 1096375-SIA445EDJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA445EDJ-T1-GE3 CAD Model

Description

The Vishay SIA445EDJ-T1-GE3 is a P-channel MOSFET that comes in an SMD (SMT) package.

  • Mounting Type: SMD (SMT)
  • Category: Discrete Semiconductor Products
  • Lifecycle Status: Active
  • Temperature Range: -55°C to 150°C (TJ)
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 12A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Max Gate Charge: 72nC @ 10V
  • Rds On: 16.5 mOhm @ 7A, 4.5V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2038 $50.9500
600+ $0.1672 $100.3200
930+ $0.1620 $150.6600
1,280+ $0.1568 $200.7040
1,655+ $0.1515 $250.7325
2,210+ $0.1359 $300.3390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,390 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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