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SIA448DJ-T1-GE3

Part No SIA448DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 12A SC70-6L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 35nC @ 8V
Max Input Capacitance 1380pF @ 1V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 12.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 1096376-SIA448DJ-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIA448DJ-T1-GE3 CAD Model

Description

The Vishay SIA448DJ-T1-GE3 is an N-channel MOSFET with a maximum power dissipation of 3.5W (Ta) and 19.2W (Tc).

  • Power Dissipation: 3.5W (Ta) and 19.2W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C (Tc): 12A
  • Gate-Source Threshold Voltage @ 250μA: 1V
  • Maximum Rds On @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2864 $58.7120
495+ $0.2345 $116.0775
765+ $0.2275 $174.0375
1,050+ $0.2206 $231.6300
1,360+ $0.2125 $289.0000
1,820+ $0.1906 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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