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Same model may have multiple batches, images only for reference.
SIA453EDJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA453EDJ-T1-GE3

Part No SIA453EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 24A PPAK SC-70-6
Datasheet
SIA453EDJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 1900pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 18.5 mOhm @ 5A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 1096377-SIA453EDJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA453EDJ-T1-GE3 CAD Model

Description

The SIA453EDJ-T1-GE3 from Vishay is a P-channel MOSFET that is ideal for use in various electronic applications.

  • Power Dissipation: 3.5W (Ta), 19W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 24A (Tc)
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 66nC @ 10V
  • Maximum Rds On at Id, Vgs: 18.5 mOhm @ 5A, 10V
  • Package/Case: PowerPAK SC-70-6 Single
  • Dimension: PowerPAK SC-70-6
  • Operating Temperature Range: -50°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5071 $50.1420
49+ $2.0572 $100.8028
76+ $1.9929 $151.4604
104+ $1.9286 $200.5744
135+ $1.8643 $251.6805
180+ $1.6714 $300.8520
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Availability: 817 pieces
MOQ: 20 pcs
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