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SIA483DJ-T1-GE3

Part No SIA483DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 12A SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 1550pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 1096380-SIA483DJ-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIA483DJ-T1-GE3 CAD Model

Description

The Vishay 1096380-SIA483DJ-T1-GE3 is a P-channel MOSFET with a power dissipation of 3.5W (Ta) and 19W (Tc).

  • Power Dissipation: 3.5W (Ta), 19W (Tc)
  • Package: PowerPAK SC-70-6 Single
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On @ Id, Vgs: 21 mOhm @ 5A, 10V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 45nC @ 10V
  • Applications: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4517 $51.9455
270+ $0.3706 $100.0620
420+ $0.3590 $150.7800
580+ $0.3475 $201.5500
745+ $0.3359 $250.2455
1,000+ $0.3011 $301.1000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,591 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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