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SIA519EDJ-T1-GE3

Name: SIA519EDJ-T1-GE3
Brand: Vishay
SKU: 513131
Availability: InStock
Rating: 4.93 (48 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIA519EDJ-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N/P-CH 20V 4.5A SC70-6
Datasheet	SIA519EDJ-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	4.5A
Maximum Rds On at Id,Vgs	40 mOhm @ 4.2A, 4.5V
Gate-Source Threshold Voltage	1.4V @ 250μA
Max Gate Charge	12nC @ 10V
Max Input Capacitance	350pF @ 10V
Maximum Power Dissipation	7.8W
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK SC-70-6 Dual
Win Source Part Number	1096381-SIA519EDJ-T1-GE3
Popularity	Medium
Supply and Demand Status	Limited
Application Field	Used in Industrial, Power Management
Ultra Librarian 3D Model	Ultra Librarian SIA519EDJ-T1-GE3 CAD Model

Alternative Products

Description

The Vishay SiA519EDJ-T1-GE3 is a logic level gate N and P-channel FET transistor.

Power Dissipation: 7.8W
Maximum Gate Charge: 12nC @ 10V
Popularity: Medium
Supply and Demand: Limited
Application: Industrial Power Management
Package: PowerPAK SC-70-6 Dual

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
155+	$0.3330	$51.6150
370+	$0.2732	$101.0840
570+	$0.2647	$150.8790
785+	$0.2562	$201.1170
1,010+	$0.2476	$250.0760
1,355+	$0.2220	$300.8100

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 108,730 pieces

MOQ: 155 pcs

Order Increment : 1 pcs

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