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SIA910EDJ-T1-GE3

Part No SIA910EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 12V 4.5A SC-70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 28 mOhm @ 5.2A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 16nC @ 8V
Max Input Capacitance 455pF @ 6V
Maximum Power Dissipation 7.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 028732-SIA910EDJ-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIA910EDJ-T1-GE3 CAD Model

Description

The SIA910EDJ-T1-GE3 is a dual N-Channel FET electronic component manufactured by Vishay.

  • Maximum Power Dissipation: 7.8W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 4.5A
  • Maximum Rds on at Id, Vgs: 28 mOhm @ 5.2A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2959 $59.1800
480+ $0.2429 $116.5920
740+ $0.2353 $174.1220
1,015+ $0.2277 $231.1155
1,315+ $0.2201 $289.4315
1,760+ $0.1973 $347.2480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,292 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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