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Same model may have multiple batches, images only for reference.
SIA920DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA920DJ-T1-GE3

Part No SIA920DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIA920DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 27mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 4V
Power - Max 7.8W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Base Product Number SIA920
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278474-SIA920DJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA920DJ-T1-GE3 CAD Model

Description

The Vishay Siliconix is an obsolete dual N-Channel MOSFET with a maximum power of 7.8W.

  • Maximum Power: 7.8W
  • Maximum Gate Charge: 7.5nC @ 4.5V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • ECCN: EAR99

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