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Same model may have multiple batches, images only for reference.
SIB408DK-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIB408DK-T1-GE3

Part No SIB408DK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIB408DK-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 15 V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
Base Product Number SIB408
Other Names SIB408DK-T1-GE3TR,SIB408DKT1GE3,SIB408DK-T1-GE3CT,SIB408DK-T1-GE3DKR,SIB408DK-T1-GE3
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277561-SIB408DK-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIB408DK-T1-GE3 CAD Model

Description

The SIB408DK-T1-GE3 is a N-channel MOSFET transistor from Vishay Siliconix's TrenchFET® series.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 7A @ 25°C
  • Maximum On-Resistance: 40mOhm @ 6A and 10V gate-source voltage
  • Gate Threshold Voltage: 2.5V @ 250µA
  • Maximum Power Dissipation: 2.4W @ TA and 13W @ TC
  • Gate Charge: 9.5nC @ 10V gate-source voltage
  • Input Capacitance: 350pF @ 15V drain-source voltage
  • Packaging: PowerPAK® SC-75-6 packaging
  • Operating Temperature Range: -55°C to 150°C
  • Status: obsolete product

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