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Same model may have multiple batches, images only for reference.
SIB414DK-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIB414DK-T1-GE3

Part No SIB414DK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 8V 9A PPAK SC75-6
Datasheet
SIB414DK-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 14.03nC @ 5V
Max Input Capacitance 732pF @ 4V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 7.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-75-6L Single
Dimension PowerPAK SC-75-6L
Win Source Part Number 1096390-SIB414DK-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SIB414DK-T1-GE3 CAD Model

Description

The Vishay SIB414DK-T1-GE3 is an N-channel MOSFET with a Drain-Source Breakdown Voltage of 8V and Continuous Drain Current of 9A (Tc) @ 25°C.

  • Power Dissipation: 2.4W (Ta) and 13W (Tc)
  • Mounting: SMD (SMT) technology
  • Polarity: N-Channel
  • Category: Discrete Semiconductor Products
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Status: Obsolete(EOL)
  • Temperature Range - Operating: -55°C to 150°C (TJ)
  • Case/Package: PowerPAK SC-75-6L Single
  • Max Gate Charge: 14.03nC @ 5V
  • Max Input Capacitance: 732pF @ 4V
  • Maximum Gate-Source Voltage: ±5V
  • Maximum Rds On @ Id,Vgs: 26 mOhm @ 7.9A, 4.5V
  • Supply and Demand Status: Sufficient

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92+ $3.7792 $347.6864
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