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Same model may have multiple batches, images only for reference.
SIB422EDK-T4-GE3
Same model may have multiple batches, images only for reference.

SIB422EDK-T4-GE3

Part No SIB422EDK-T4-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIB422EDK-T4-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 7.1A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±8V
Power Dissipation (Max) 2.5W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
Base Product Number SIB422
Other Names 742-SIB422EDK-T4-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277536-SIB422EDK-T4-GE3
Ultra Librarian 3D Model Ultra Librarian SIB422EDK-T4-GE3 CAD Model

Description

The SIB422EDK-T4-GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 7.1A (Ta) or 9A (Tc)
  • Maximum On-Resistance: 30mOhm @ 5A and 4.5V
  • Gate Charge: 18nC @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • Operating Temperature Range: -55°C to 150°C
  • Package: PowerPAK® SC-75-6 package

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.4627 $52.3881
7+ $14.3284 $100.2988
11+ $13.8806 $152.6866
15+ $13.4329 $201.4935
20+ $12.9851 $259.7020
26+ $11.6418 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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