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SIB433EDK-T1-GE3

Part No SIB433EDK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 58mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 8 V
Vgs (Max) ±8V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
Base Product Number SIB433
Other Names SIB433EDKT1GE3,SIB433EDK-T1-GE3DKR,SIB433EDK-T1-GE3CT,SIB433EDK-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277578-SIB433EDK-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIB433EDK-T1-GE3 CAD Model

Description

The Vishay Siliconix SIB433EDK-T1-GE3 MOSFET is a P-Channel FET type.

  • Maximum drain-to-source voltage: 20V
  • Continuous drain current: 9A @ 25°C
  • Maximum gate-source voltage: ±8V
  • Gate charge: 21nC @ 8V
  • Maximum on-resistance: 58mOhm @ 3.7A and 4.5V
  • Package: PowerPAK® SC-75-6
  • Power dissipation: 2.4W @ Ta and 13W @ Tc
  • Ideal for: use in applications such as power management, battery protection, load switches, and DC/DC converters

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6986 $52.3950
175+ $0.5732 $100.3100
275+ $0.5553 $152.7075
375+ $0.5374 $201.5250
485+ $0.5195 $251.9575
645+ $0.4657 $300.3765
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,295 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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