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Same model may have multiple batches, images only for reference.
SIE802DF-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIE802DF-T1-E3

Part No SIE802DF-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A 10-POLARPAK
Datasheet
SIE802DF-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.7V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 7000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 1.9 mOhm @ 23.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 10-PolarPAK (L)
Dimension 10-PolarPAK (L)
Win Source Part Number 124963-SIE802DF-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIE802DF-T1-E3 CAD Model

Description

The Vishay MOSFET is a N-Channel power MOSFET that has a maximum power dissipation of 5.2W (Ta), 125W (Tc).

  • Mounting: surface-mount device
  • Model: 124963-SIE802DF-T1-E3
  • Breakdown Voltage: 30V
  • Continuous Drain Current: 60A (Tc)
  • Market Popularity: low
  • Supply and Demand Status: balanced

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