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Same model may have multiple batches, images only for reference.
SIE862DF Real Image
Same model may have multiple batches, images only for reference.

SIE862DF

Part No SIE862DF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A POLARPAK
Datasheet
SIE862DF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 3100pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 10-PolarPAK (U)
Dimension 10-PolarPAK (U)
Win Source Part Number 064634-SIE862DF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIE862DF CAD Model

Description

The Vishay 064634-SIE862DF is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Max Gate Charge: 75nC @ 10V
  • Maximum Rds On: 3.2 mOhm @ 20A, 10V
  • Packaging: 10-PolarPAK (U)
  • Operating Temperature Range (TJ): -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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