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Same model may have multiple batches, images only for reference.
SIHA15N50E-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHA15N50E-E3

Part No SIHA15N50E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHA15N50E-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1162 pF @ 100 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHA15
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277884-SIHA15N50E-E3
Ultra Librarian 3D Model Ultra Librarian SIHA15N50E-E3 CAD Model

Description

The Vishay Siliconix SIHA15N50E-E3 is an N-channel MOSFET transistor with a drain to source voltage (Vdss) of 500 V and a current - continuous drain (Id) @ 25°C of 14.5A (Tc).

  • Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Power Dissipation (Max): 33W (Tc)
  • Mounting: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
  • Voltage (Vgs): ±30V
  • Operating Temperature Range: -55°C ~ 150°C (TJ)

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