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SIHA22N60EL-E3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIHA22N60EL-E3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHA22N60EL-E3 Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	EL
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	197mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1690 pF @ 100 V
Power Dissipation (Max)	35W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220 Full Pack
Package / Case	TO-220-3 Full Pack
Base Product Number	SIHA22
Standard Package	1,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277707-SIHA22N60EL-E3
Ultra Librarian 3D Model	Ultra Librarian SIHA22N60EL-E3 CAD Model

Alternative Products

Description

The SIHA22N60EL-E3 MOSFET from Vishay Siliconix is a high-quality N-channel MOSFET that has a drain to source voltage of 600V.

Drain to Source Voltage: 600V
Package: TO-220-3 full pack
Series: EL series
Standard Package: 1,000
Maximum Power Dissipation: 35W
Gate Charge (Qg): 74 nC @ 10V
Input Capacitance (Ciss): 1690 pF @ 100Vds
Operating Temperature Range: -55°C to 150°C (TJ)
ECCN: EAR99 compliant
HTSUS Code: 8541.29.0095
Base Product Number: SIHA22
Drive Voltage: 10V (Maximum Rds On and minimum Rds On)

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