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Same model may have multiple batches, images only for reference.
SIHA6N80E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHA6N80E-GE3

Part No SIHA6N80E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHA6N80E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 827 pF @ 100 V
Power Dissipation (Max) 31W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHA6
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277719-SIHA6N80E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHA6N80E-GE3 CAD Model

Description

The Vishay Siliconix SIHA6N80E-GE3 is an N-Channel MOSFET transistor with a drain to source voltage of 800V and a continuous drain current of 5.4A (Tc) at 25°C.

  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 5.4A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Power Dissipation (Max): 31W (Tc)
  • Mounting Type: Through Hole

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