The Vishay Siliconix SIHB105N60EF-GE3 is an N-channel MOSFET transistor.

• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
• Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Power Dissipation (Max): 208W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
• Vgs (Max): ±30V
• Package: Tube
• Standard Package: 50
• Mounting: SMD (SMT)
• Technology: MOSFET (Metal Oxide)
• FET Feature: Not Specified
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK (TO-263)
• Operating Temperature Range: -55°C to 150°C (TJ)
• MSL Level: 1 (unlimited)
• HTSUS: 8541.29.0095