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Same model may have multiple batches, images only for reference.
SIHA180N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHA180N60E-GE3

Part No SIHA180N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHA180N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1085 pF @ 100 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Base Product Number SIHA180
Other Names SIHA180N60E-GE3DKR,SIHA180N60E-GE3TR,SIHA180N60E-GE3CT,SIHA180N60E-GE3DKR,SIHA180N60E-GE3TR,SIHA180N60E-GE3CT,SIHA180N60E-GE3CTINACTIVE,SIHA180N60E-GE3DKRINACTIVE
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277739-SIHA180N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHA180N60E-GE3 CAD Model

Description

This electronic component is a MOSFET (Metal Oxide) type manufactured by Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 600V
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3191 $51.0202
53+ $1.9029 $100.8537
82+ $1.8434 $151.1588
113+ $1.7839 $201.5807
145+ $1.7245 $250.0525
195+ $1.5461 $301.4895
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Availability: 6,000 pieces
MOQ: 22 pcs
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