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SIHB15N60E-GE3

Part No SIHB15N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 1350pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1096410-SIHB15N60E-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHB15N60E-GE3 CAD Model

Description

The Vishay SIHB15N60E-GE3 is a N-channel MOSFET transistor with a drain-source breakdown voltage of 600V and a continuous drain current of 15A @ 25°C.

  • Power Dissipation: 180W
  • Rds On: 280 mOhm @ 8A and 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 78nC @ 10V
  • Input Capacitance: 1350pF @ 100V
  • Package: D2PAK
  • Temperature Range: -55°C to 150°C
  • Category: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5750 $59.2250
55+ $2.1129 $116.2095
85+ $2.0468 $173.9780
117+ $1.9808 $231.7536
151+ $1.9148 $289.1348
202+ $1.7167 $346.7734
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Availability: 10,600 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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