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Same model may have multiple batches, images only for reference.
SIHB180N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHB180N60E-GE3

Part No SIHB180N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHB180N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1085 pF @ 100 V
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB180
Other Names SIHB180N60E-GE3DKR,SIHB180N60E-GE3DKRINACTIVE,SIHB180N60E-GE3CT,SIHB180N60E-GE3TR,SIHB180N60E-GE3CTINACTIVE,SIHB180N60E-GE3DKR,SIHB180N60E-GE3TR,SIHB180N60E-GE3CT
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277778-SIHB180N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB180N60E-GE3 CAD Model

Description

The Vishay SIHB180N60E-GE3 is a high-quality N-Channel MOSFET that is widely used in various electronic applications.

  • Manufacturer: Vishay Siliconix
  • Win Source Part Number: 1277778-SIHB180N60E-GE3
  • Maximum Drain to Source Voltage: 600V
  • Continuous Drain Current: 19A @ 25°C
  • Rds On: 180mOhm @ 9.5A and 10V
  • Gate Charge: 33nC @ 10V
  • Input Capacitance: 1085pF @ 100V
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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